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Titolo:
HIDDEN HIGH-TO-LOW CRISTOBALITE TYPE TRANSITION IN HGSE AND HGTE AT HIGH-PRESSURE
Autore:
MCMAHON MI; NELMES RJ; LIU H; BELMONTE SA;
Indirizzi:
UNIV EDINBURGH,DEPT PHYS & ASTRON,MAYFIELD RD EDINBURGH EH9 3JZ MIDLOTHIAN SCOTLAND
Titolo Testata:
Physical review letters
fascicolo: 9, volume: 77, anno: 1996,
pagine: 1781 - 1784
SICI:
0031-9007(1996)77:9<1781:HHCTTI>2.0.ZU;2-8
Fonte:
ISI
Lingua:
ENG
Soggetto:
SILICON; PHASES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
20
Recensione:
Indirizzi per estratti:
Citazione:
M.I. Mcmahon et al., "HIDDEN HIGH-TO-LOW CRISTOBALITE TYPE TRANSITION IN HGSE AND HGTE AT HIGH-PRESSURE", Physical review letters, 77(9), 1996, pp. 1781-1784

Abstract

A transition from the zinc blende (ZB) phase to a distorted-ZB structure has been found in both HgSe and HgTe. This is a structure type notpreviously reported in any of the II-VI or III-V systems. The transition occurs similar to 1 GPa above the pressure at which the ZB phase becomes unstable against the cinnabar phase, and is thus observable only because of the sluggishness of the ZB to cinnabar transformation. The atomic coordinates of the distorted-ZB structure are remarkably similar to those of the cations in the low-cristobalite phases of AlPO4 and GaPO4.

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Documento generato il 26/09/20 alle ore 08:21:53