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Titolo:
STATUS OF MBE TECHNOLOGY FOR THE FLEXIBLE MANUFACTURING OF HGCDTE FOCAL-PLANE ARRAYS
Autore:
RAJAVEL RD; JAMBA D; WU OK; ROTH JA; BREWER PD; JENSEN JE; COCKRUM CA; VENZOR GM; JOHNSON SM;
Indirizzi:
HUGHES RES LABS MALIBU CA 90265 SANTA BARBARA RES CTR GOLETA CA 93117
Titolo Testata:
Journal of electronic materials
fascicolo: 8, volume: 25, anno: 1996,
pagine: 1411 - 1415
SICI:
0361-5235(1996)25:8<1411:SOMTFT>2.0.ZU;2-B
Fonte:
ISI
Lingua:
ENG
Keywords:
AS-DOPING; HGCDTE; IR DETECTORS; MOLECULAR BEAM EPITAXY (MBE);
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
10
Recensione:
Indirizzi per estratti:
Citazione:
R.D. Rajavel et al., "STATUS OF MBE TECHNOLOGY FOR THE FLEXIBLE MANUFACTURING OF HGCDTE FOCAL-PLANE ARRAYS", Journal of electronic materials, 25(8), 1996, pp. 1411-1415

Abstract

A robust process has been developed for the reproducible growth of in-situ doped Hg1-xCdxTe:As alloys by molecular beam epitaxy. Net hole concentrations in excess of 5 x 10(17) cm(-3), with peak mobilities >200 cm(2)/Vs were measured in Hg0.74Cd0.26Te:As films. The p-type layerswere twin-free and consistently exhibit narrow x-ray rocking curves (<40 arc sec). The reproducible growth of small lots of p-on-n LWIR detector structures has been established. For a typical lot consisting of13 layers, the average x-value of the n-type lease layer was 0.226 with a standard deviation of 0.003. The lateral compositional uniformityacross a 2.5 cm x 2.5 cm wafer was x = +/-0.0006. High performance p-on-n LWIR diodes were fabricated that exhibited R(0)A(0) values (0-fovat 78K) as large as 350 Omega cm(2) at 10.4 mu m.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 13/07/20 alle ore 10:51:53