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Titolo:
HETEROEPITAXY OF HGCDTE(112) INFRARED DETECTOR STRUCTURES ON SI(112) SUBSTRATES BY MOLECULAR-BEAM EPITAXY
Autore:
DELYON TJ; RAJAVEL RD; JENSEN JE; WU OK; JOHNSON SM; COCKRUM CA; VENZOR GM;
Indirizzi:
HUGHES RES LABS,3011 MALIBU CANYON RD MALIBU CA 90265 SANTA BARBARA RES CTR GOLETA CA 93117
Titolo Testata:
Journal of electronic materials
fascicolo: 8, volume: 25, anno: 1996,
pagine: 1341 - 1346
SICI:
0361-5235(1996)25:8<1341:HOHIDS>2.0.ZU;2-K
Fonte:
ISI
Lingua:
ENG
Soggetto:
GROWTH; GAAS; CDTE; REDUCTION; LONG; SI;
Keywords:
CDTE; CDTE/SI; FOCAL-PLANE ARRAYS (FPAS); HETEROEPITAXY; HGCDTE; HGCDTE/SI; HYBRID RELIABILITY; INFRARED DETECTORS; MOLECULAR-BEAM EPITAXY (MBE);
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
19
Recensione:
Indirizzi per estratti:
Citazione:
T.J. Delyon et al., "HETEROEPITAXY OF HGCDTE(112) INFRARED DETECTOR STRUCTURES ON SI(112) SUBSTRATES BY MOLECULAR-BEAM EPITAXY", Journal of electronic materials, 25(8), 1996, pp. 1341-1346

Abstract

High-quality, single-crystal epitaxial films of CdTe(112)B and HgCdTe(112)B have been grown directly on Si(112) substrates without the needfor GaAs interfacial layers. The CdTe and HgCdTe films have been characterized with optical microscopy, x-ray diffraction, wet chemical defect etching, and secondary ion mass spectrometry. HgCdTe/Si infrared detectors have also been fabricated and tested. The CdTe(112)B films are highly specular, twin-free, and have x-ray rocking curves as narrow as 72 are-sec and near-surface etch pit density (EPD) of 2 x 10(6) cm(-2) for 8 mu m thick films. HgCdTe(112)B films deposited on Si substrates have x-ray rocking curve FWHM I as low as 76 are-sec and EPD of 3-22 x 10(6) cm(-2). These MBE-grown epitaxial structures have been usedto fabricate the first high-performance HgCdTe IR detectors grown directly on Si without use of an intermediate GaAs buffer layer. HgCdTe/Si infrared detectors have been fabricated with 40% quantum efficiency and R(0)A = 1.64 x 10(4) Omega-cm(2) (0 FOV) for devices with 7.8 mu mcutoff wavelength at 78K to demonstrate the capability of MBE for growth of large-area HgCdTe arrays on Si.

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Documento generato il 10/07/20 alle ore 03:09:27