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Titolo:
RIPPLE TOPOGRAPHY DEVELOPMENT ON ION-BOMBARDED SI
Autore:
CARTER G; VISHNYAKOV V; NOBES MJ;
Indirizzi:
UNIV SALFORD,DEPT ELECT & ELECT ENGN SALFORD M5 4WT LANCS ENGLAND
Titolo Testata:
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
fascicolo: 1-4, volume: 115, anno: 1996,
pagine: 440 - 445
SICI:
0168-583X(1996)115:1-4<440:RTDOIS>2.0.ZU;2-H
Fonte:
ISI
Lingua:
ENG
Soggetto:
ROUGHENING INSTABILITY; SURFACE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
14
Recensione:
Indirizzi per estratti:
Citazione:
G. Carter et al., "RIPPLE TOPOGRAPHY DEVELOPMENT ON ION-BOMBARDED SI", Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 115(1-4), 1996, pp. 440-445

Abstract

The development of a wave or ripple like topography on Si by non-normal incidence ion bombardment is a well known but poorly understood phenomenon. In an attempt to improve understanding of the processes responsible a series of studies have been made with 45 degrees ion incidence of Ne+, Si+, Ar+ and Xe+ species with energies between 5 and 40 keV and for substrate temperatures from 100 to 700 K. Topography evolutionwas observed by scanning electron microscopy and atomic force microscopy. Quite generally it was found that ripples could be produced by all ion species on low temperature substrates but only by the heavier ions at room temperature. For Ar+, at room temperature, there appears tobe an energy threshold below which ripples are not produced. It will be shown how these results cannot be explained by current models of curvature mediated stochastic sputtering coupled with atomic transport related relaxation processes and other approaches are considered.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 03/12/20 alle ore 11:38:59