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Titolo:
LOW-RESISTANCE OHMIC CONTACTS TO P-GE1-XCX ON SI
Autore:
SHAO XP; ROMMEL SL; OMER BA; BERGER PR; KOLODZEY J; UNRUH KM;
Indirizzi:
UNIV DELAWARE,DEPT ELECT ENGN NEWARK DE 19716 UNIV DELAWARE,DEPT PHYS NEWARK DE 19716
Titolo Testata:
IEEE electron device letters
fascicolo: 1, volume: 18, anno: 1997,
pagine: 7 - 9
SICI:
0741-3106(1997)18:1<7:LOCTPO>2.0.ZU;2-P
Fonte:
ISI
Lingua:
ENG
Soggetto:
BARRIER HEIGHTS; GROWTH;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
18
Recensione:
Indirizzi per estratti:
Citazione:
X.P. Shao et al., "LOW-RESISTANCE OHMIC CONTACTS TO P-GE1-XCX ON SI", IEEE electron device letters, 18(1), 1997, pp. 7-9

Abstract

We report on ohmic contact measurements of Al, Au, and W metallizations to p-type epitaxial Ge0.9983C0.0017 grown on a (100) Si substrate by molecular beam epitaxy (MBE). Contacts were annealed at various temperatures, and values of specific contact resistance have been achievedwhich range from 10(-5) Ohm . cm(2) to as low as 5.6 x 10(-6) Ohm . cm(2). Theoretical calculations of the contact resistance of metals on Ge1-xCx with small percentages of carbon, based on the thermionic heldemission mechanism of conduction, result in good agreement with the experimental data, We conclude that Al and Au are suitable ohmic contacts to p-Ge0.9983C0.0017 alloys.

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Documento generato il 01/10/20 alle ore 07:42:58