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Titolo:
SYNCHROTRON RADIATION-STIMULATED SEMICONDUCTOR PROCESS AND NEW PROSPECTS OF CORE ELECTRON-EXCITATION PHOTOCHEMISTRY
Autore:
URISU T; YOSHIGOE A; IMAIZUMI Y;
Indirizzi:
GRAD UNIV ADV STUDIES,INST MOL SCI OKAZAKI AICHI 444 JAPAN
Titolo Testata:
Optoelectronics
fascicolo: 1, volume: 11, anno: 1996,
pagine: 57 - 70
SICI:
0912-5434(1996)11:1<57:SRSPAN>2.0.ZU;2-M
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; MOLECULAR-BEAM EPITAXY; ION DESORPTION; PHOTOSTIMULATED EVAPORATION; SIO2 SURFACE; TEMPERATURE; GROWTH; SILICON; FILMS; IRRADIATION;
Keywords:
SYNCHROTRON RADIATION; CORE ELECTRON EXCITATION; SITE SPECIFICITY; SEMICONDUCTOR PROCESS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
52
Recensione:
Indirizzi per estratti:
Citazione:
T. Urisu et al., "SYNCHROTRON RADIATION-STIMULATED SEMICONDUCTOR PROCESS AND NEW PROSPECTS OF CORE ELECTRON-EXCITATION PHOTOCHEMISTRY", Optoelectronics, 11(1), 1996, pp. 57-70

Abstract

The synchrotron radiation (SR)-stimulated surface processes have beenactively studied as a new application field of SR in the last decade. The study of the mechanism of these surface photochemical reactions is necessary to clarify the characteristics unique to the SR-stimulatedprocess and to develop an essentially new process technology. In situobservations of SR-stimulated Si gas source molecular beam epitaxy byinfrared reflection absorption spectroscopy and SR irradiation effects on the dimethylaluminum hydride condensed layer by X-ray photoelectron spectroscopy suggest the potential importance of the site-specific chemical reaction in the condensed system induced by core electron excitation. A new process technique, selective core electron excitation using a monochromatized SR beam, is proposed.

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Documento generato il 01/10/20 alle ore 07:46:06