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Titolo:
SHORT-TERM WAVELENGTH CHANGES IN 1.5-MU-M INGAASP-INP DISTRIBUTED-FEEDBACK SEMICONDUCTOR-LASERS
Autore:
JEONG J; SONG MK; JANG DH; PARK KH;
Indirizzi:
KOREA UNIV,DEPT RADIO ENGN,1,5KA,ANAM DONG,SUNGBUK KU SEOUL 136701 SOUTH KOREA ETRI,COMPOUND SEMICOND DIV TAEJON 302606 SOUTH KOREA
Titolo Testata:
IEEE photonics technology letters
fascicolo: 8, volume: 8, anno: 1996,
pagine: 992 - 994
SICI:
1041-1135(1996)8:8<992:SWCI1I>2.0.ZU;2-I
Fonte:
ISI
Lingua:
ENG
Soggetto:
DFB LASERS; SHIFTS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
6
Recensione:
Indirizzi per estratti:
Citazione:
J. Jeong et al., "SHORT-TERM WAVELENGTH CHANGES IN 1.5-MU-M INGAASP-INP DISTRIBUTED-FEEDBACK SEMICONDUCTOR-LASERS", IEEE photonics technology letters, 8(8), 1996, pp. 992-994

Abstract

We report short-term lasing wavelength changes in 1.5-mu m InGaAsP-InP distributed feedback (DFB) lasers. The lasing wavelengths after biasing the lasers have been changed upto 1.2 Angstrom at 20 degrees C while maintaining the constant output power. It takes over 700-2000 s. tostabilize the lasing wavelengths in many lasers. The annealing effects could be partially responsible for the wavelength change. It certainly affects the initial performance of cold-start frequency-division-multiplexed systems.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 02/04/20 alle ore 17:15:25