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Titolo:
OPTICALLY PUMPED STIMULATED-EMISSION IN ZNS ZNCDS MULTIPLE QUANTUM-WELLS, MBE-GROWN ON GAP/
Autore:
OZANYAN KB; NICHOLLS JE; MAY L; HOGG JHC; HAGSTON WE; LUNN B; ASHENFORD DE;
Indirizzi:
UNIV HULL,DEPT APPL PHYS KINGSTON HULL HU6 7RX N HUMBERSIDE ENGLAND UNIV HULL,DEPT ENGN DESIGN & MANUFACTURE KINGSTON HULL HU6 7RX N HUMBERSIDE ENGLAND
Titolo Testata:
Solid state communications
fascicolo: 6, volume: 99, anno: 1996,
pagine: 407 - 411
SICI:
0038-1098(1996)99:6<407:OPSIZZ>2.0.ZU;2-F
Fonte:
ISI
Lingua:
ENG
Soggetto:
STRAINED-LAYER SUPERLATTICES; EXCITONIC GAIN; LASER-DIODE;
Keywords:
SEMICONDUCTORS; QUANTUM WELLS; EPITAXY; OPTICAL PROPERTIES; LUMINESCENCE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
K.B. Ozanyan et al., "OPTICALLY PUMPED STIMULATED-EMISSION IN ZNS ZNCDS MULTIPLE QUANTUM-WELLS, MBE-GROWN ON GAP/", Solid state communications, 99(6), 1996, pp. 407-411

Abstract

Optically pumped stimulated emission is observed in a series of ZnS/Zn1-xCdxS multiple quantum-well (MQW) structures, grown on GaP substrates by MBE. We report lasing from a ZnS/Zn0.97Cd0.03S MQW at wavelengths as low as 333nm, the shortest yet reported in a semiconductor heterostructure. The lasing threshold decreases for deeper wells and reaches6.5 kW.cm(-2) at 8K and 80 kW.cm(-2) at 300K for the MWQs with a Cd-composition of 0.2. The results are compared to known values for similar structures grown on GaAs by MOCVD, which reveals the potential of the GaP-substrate MBE technology for the widest bandgap II-VI heterostructures incorporating ZnS-based ternary alloys. Copyright (C) 1996 Elsevier Science Ltd

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/03/20 alle ore 11:07:37