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Titolo:
WHAT CAUSES THE INVERSE STAEBLER-WRONSKI EFFECT IN P-TYPE A-SI-H
Autore:
ISOMURA M; KINOSHITA T; TSUDA S;
Indirizzi:
SANYO ELECT CO LTD,NEW MAT RES CTR,1-18-13 HASHIRIDANI HIRAKATA OSAKA573 JAPAN
Titolo Testata:
Journal of non-crystalline solids
, volume: 200, anno: 1996,
parte:, 1
pagine: 453 - 457
SICI:
0022-3093(1996)200:<453:WCTISE>2.0.ZU;2-8
Fonte:
ISI
Lingua:
ENG
Soggetto:
HYDROGENATED AMORPHOUS-SILICON;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
9
Recensione:
Indirizzi per estratti:
Citazione:
M. Isomura et al., "WHAT CAUSES THE INVERSE STAEBLER-WRONSKI EFFECT IN P-TYPE A-SI-H", Journal of non-crystalline solids, 200, 1996, pp. 453-457

Abstract

An inverse Staebler-Wronski effect in boron-doped a-Si:H is a bulk property and occurs due to the dopant activation of boron via light-soaking. It is suppressed by a considerably high hydrogen content. These phenomena can be explained by a hypothesis considering the equilibrium between three- and four-fold boron sites due to hydrogen passivation, and the trapping of the hydrogen related to the metastable boron sites(e.g. by clustered hydrogen complexes) at a very high hydrogen content.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 26/11/20 alle ore 20:09:42