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Titolo:
X-RAY PHOTOELECTRON DIFFRACTION INVESTIGATION OF CE SEGREGATION AND FILM MORPHOLOGY DURING FIRST STAGE HETEROEPITAXY OF SI ON GE(001)
Autore:
AUBEL D; KUBLER L; BISCHOFF JL; SIMON L; BOLMONT D;
Indirizzi:
UNIV HAUTE ALSACE,FAC SCI & TECH,LPSE,URA CNRS 1435,4 RUE FRERES LUMIERE F-68093 MULHOUSE FRANCE UNIV HAUTE ALSACE,FAC SCI & TECH,LPSE,URA CNRS 1435 F-68093 MULHOUSE FRANCE
Titolo Testata:
Applied surface science
fascicolo: 2, volume: 99, anno: 1996,
pagine: 169 - 183
SICI:
0169-4332(1996)99:2<169:XPDIOC>2.0.ZU;2-H
Fonte:
ISI
Lingua:
ENG
Soggetto:
AUGER-ELECTRON DIFFRACTION; STRANSKI-KRASTANOV GROWTH; CORE-LEVEL PHOTOEMISSION; GE FILMS; TEMPERATURE-DEPENDENCE; SI(100)-2X1 SURFACE; MEDIUM-ENERGY; SCATTERING; MULTIPLE; SI(001);
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
37
Recensione:
Indirizzi per estratti:
Citazione:
D. Aubel et al., "X-RAY PHOTOELECTRON DIFFRACTION INVESTIGATION OF CE SEGREGATION AND FILM MORPHOLOGY DURING FIRST STAGE HETEROEPITAXY OF SI ON GE(001)", Applied surface science, 99(2), 1996, pp. 169-183

Abstract

X-ray photoelectron diffraction (XPD) and its chemical selectivity have been used in conjunction with surface atom titration by ultra-violet photoelectron spectroscopy and conventional X-ray photoelectron spectroscopy to investigate the interplay between Ge segregation acid growth morphology in the earliest stages (0-12 monolayers) of Si solid-source-epitaxy on Ge(001)-2 x 1 surfaces held at room temperature (RT) acid at 400 degrees C. A detailed examination, as a function of the Si coverage, of the forward scattering peak contrasts in the [111] and [001] directions of the Si 2p and Ge 3d polar angle distributions provides a diagnostic of whether or not a particular atom is in the top layer(segregation) and yields information about the stacking sequences (morphology). These investigations allowed us to conclude in favour of aninitial Si bilayer patch-growth-mode exempt of segregation at RT and of a floating Ge surface at 400 degrees C, the Si agglomeration staying rather mild in the first monolayers. Accessorily, the XPD-specific problems of electron defocusing effects through long atomic chains and strain-induced lattice expansion or contraction have also been addressed.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 20/09/20 alle ore 04:21:40