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Titolo:
AFM AND STM STUDIES ON IN2O3 AND ITO THIN-FILMS DEPOSITED BY ATOMIC LAYER EPITAXY
Autore:
ASIKAINEN T; RITALA M; LESKELA R; PROHASKA T; FRIEDBACHER G; GRASSERBAUER M;
Indirizzi:
UNIV HELSINKI,DEPT CHEM,POB 55 FIN-00014 HELSINKI FINLAND VIENNA TECH UNIV,INST ANALYT CHEM A-1060 VIENNA AUSTRIA
Titolo Testata:
Applied surface science
fascicolo: 2, volume: 99, anno: 1996,
pagine: 91 - 98
SICI:
0169-4332(1996)99:2<91:AASSOI>2.0.ZU;2-1
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
15
Recensione:
Indirizzi per estratti:
Citazione:
T. Asikainen et al., "AFM AND STM STUDIES ON IN2O3 AND ITO THIN-FILMS DEPOSITED BY ATOMIC LAYER EPITAXY", Applied surface science, 99(2), 1996, pp. 91-98

Abstract

The surface morphology of In2O3 and In2O3:Sn (ITO) thin films deposited by atomic layer epitaxy has been studied by AFM and STM. The effects of film thickness, tin content and different doping schemes on the surface morphology were examined, Also the initial growth of SnO2 was studied in order td better understand the influence of the intermediateSnO2 pulses. Increasing film thickness led to increasing surface roughness, but the roughening rate decreased substantially after about 800deposition cycles, In the ITO films the dependencies of roughness andelectrical resistivity on the tin content were found to be parallel, both having a minimum at a tin content of about 4-7%. Deposition of a few cycles of SnO, on a rough In2O3 film surface was found to decreasethe surface roughness. In addition to the studies on the morphological development of the films, comparison between AFM and STM data allowed to obtain information on the electrical properties of the films.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/09/20 alle ore 07:34:52