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Titolo:
GE SEGREGATION TESTED BY X-RAY PHOTOELECTRON DIFFRACTION AND SURFACE ATOM TITRATION DURING THE FIRST STAGE OF SI HETEROEPITAXY ON GE(001)2 X-1
Autore:
AUBEL D; KUBLER L; BISCHOFF JL; BOLMONT D;
Indirizzi:
UNIV HAUTE ALSACE,FAC SCI & TECH,LPSE,CNRS,URA 1435,4 RUE FRERES LUMIERE F-68093 MULHOUSE FRANCE UNIV HAUTE ALSACE,FAC SCI & TECH,LPSE,CNRS,URA 1435 F-68093 MULHOUSE FRANCE
Titolo Testata:
Surface science
, volume: 352, anno: 1996,
pagine: 634 - 640
SICI:
0039-6028(1996)352:<634:GSTBXP>2.0.ZU;2-7
Fonte:
ISI
Lingua:
ENG
Soggetto:
AUGER-ELECTRON DIFFRACTION; CORE-LEVEL PHOTOEMISSION; TEMPERATURE-DEPENDENCE; SCATTERING; FILMS; 2X1;
Keywords:
EPITAXY; GERMANIUM; GROWTH; MOLECULAR BEAM EPITAXY; PHOTOELECTRON DIFFRACTION; SEMICONDUCTOR-SEMICONDUCTOR HETEROSTRUCTURES; SILICON NITRIDE; SILICON-GERMANIUM; SURFACE STRUCTURE, MORPHOLOGY, ROUGHNESS, AND TOPOGRAPHY; VISIBLE AND ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
18
Recensione:
Indirizzi per estratti:
Citazione:
D. Aubel et al., "GE SEGREGATION TESTED BY X-RAY PHOTOELECTRON DIFFRACTION AND SURFACE ATOM TITRATION DURING THE FIRST STAGE OF SI HETEROEPITAXY ON GE(001)2 X-1", Surface science, 352, 1996, pp. 634-640

Abstract

The questions of growth morphology and Ge segregation during Si heteroepitaxial growth on Ge(001)2 x 1 are addressed in the earliest stagesof MBE growth (0-3 monolayers) at room temperature (RT) and 400 degrees C using in situ photoemission techniques. X-ray photoelectron diffraction (XPD) combined with surface atom titration by ultraviolet photoelectron spectroscopy (UPS), provides a unique way to reach information about the elements (Si or Ge) located in the top layer and their stacking sequences by tracking the appearances of forward scattering events for different polar directions and Si coverages. The observation offorward scattering reinforcements for the Si2p core level intensity well sooner than expected for laminar growth is in favour of Si agglomeration or (and) Ge segregation, The surface atom titration based on a selective reactivity of Ge and Si against RT NH3 adsorption shows thatat 400 degrees C the surface is essentially Ge terminated and that Gesegregation is prevailing as opposed to the RT growth where Si termination prevails. These results are compared to those obtained for the inverted Ge/Si(001) interface.

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Documento generato il 30/10/20 alle ore 09:03:52