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Titolo:
ATOMIC-SCALE STUDIES OF EPITAXIAL-GROWTH PROCESSES USING X-RAY TECHNIQUES
Autore:
KISKER DW; STEPHENSON GB; TERSOFF J; FUOSS PH; BRENNAN S;
Indirizzi:
IBM CORP,DIV RES,THOMAS J WATSON RES CTR YORKTOWN HTS NY 10598 AT&T BELL LABS MURRAY HILL NJ 07974 STANFORD SYNCHROTRON RADIAT LAB MENLO PK CA 94025
Titolo Testata:
Journal of crystal growth
fascicolo: 1-2, volume: 163, anno: 1996,
pagine: 54 - 59
SICI:
0022-0248(1996)163:1-2<54:ASOEPU>2.0.ZU;2-Q
Fonte:
ISI
Lingua:
ENG
Soggetto:
SURFACE; SCATTERING; GAAS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
D.W. Kisker et al., "ATOMIC-SCALE STUDIES OF EPITAXIAL-GROWTH PROCESSES USING X-RAY TECHNIQUES", Journal of crystal growth, 163(1-2), 1996, pp. 54-59

Abstract

In this work we have applied grazing incidence X-ray scattering to the study of nucleation and growth of GaAs by organometallic vapor phaseepitaxy. Using the sensitivity of scattering at the 110 crystal truncation rod (CTR) position to the smoothness of the surface, we are ableto monitor the crossover from layer-by-layer to step-flow growth. More detailed information about the nucleation process was determined by using diffuse scattering near the CTR position to measure the spacing of two-dimensional islands during growth as a function of flux and deposition temperature. Application of standard nucleation theory to the analysis of this data suggests that the critical island size during OMVPE growth is likely to be much larger than a single adatom, in contrast with what is usually assumed for semiconductor systems.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 19/09/20 alle ore 14:13:01