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Titolo:
(BA,SR)TIO3 CAPACITOR TECHNOLOGY FOR GBIT-SCALE DRAMS
Autore:
MIKAMI N; KAWAHARA T; HORIKAWA T; YAMAMUKA M; MAKITA T; KUROIWA T; YUUKI A; SHIBANO T; OOMORI T; ONO K; SATOH S; ABE H;
Indirizzi:
MITSUBISHI ELECTR CORP,ADV TECHNOL R&D CTR,8-1-1 TSUKAGUCHI HONMACHI AMAGASAKI HYOGO 661 JAPAN
Titolo Testata:
Journal of the Korean Physical Society
, volume: 29, anno: 1996, supplemento:, S
pagine: 598 - 602
SICI:
0374-4884(1996)29:<598:(CTFGD>2.0.ZU;2-7
Fonte:
ISI
Lingua:
ENG
Soggetto:
THIN-FILMS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
9
Recensione:
Indirizzi per estratti:
Citazione:
N. Mikami et al., "(BA,SR)TIO3 CAPACITOR TECHNOLOGY FOR GBIT-SCALE DRAMS", Journal of the Korean Physical Society, 29, 1996, pp. 598-602

Abstract

DRAM application of(Ba,Sr)TiO3 (BST) films is investigated. Because of low dielectric constant of BST films due to the size effect, Gbit scale DRAM capacitor should be a thick film stacked structure. Using a conformal CVD process, we obtained a cell capacitance greater than 25 fF in a 1Gbit DRAM capacitor with a 200-nm high Ru storage node. The property which mainly controls the refreshing operation of the DRAM is not the DC leakage current but rather the dissipation of the electric charge from the dielectric after-effect.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 18/09/20 alle ore 20:08:21