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Titolo:
TIME-RESOLVED PHOTOLUMINESCENCE STUDY ON ALXGA1-XAS SPONTANEOUS VERTICAL QUANTUM-WELL STRUCTURES
Autore:
USAMI N; PAN WG; YAGUCHI H; ITO R; ONABE K; AKIYAMA H; SHIRAKI Y;
Indirizzi:
UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MEGURO KU,4-6-1 KOMABA TOKYO 153JAPAN UNIV TOKYO,FAC ENGN,DEPT APPL PHYS,BUNKYO KU TOKYO 113 JAPAN
Titolo Testata:
Applied physics letters
fascicolo: 23, volume: 68, anno: 1996,
pagine: 3221 - 3223
SICI:
0003-6951(1996)68:23<3221:TPSOAS>2.0.ZU;2-A
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL VAPOR-DEPOSITION; WIRES; FABRICATION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
N. Usami et al., "TIME-RESOLVED PHOTOLUMINESCENCE STUDY ON ALXGA1-XAS SPONTANEOUS VERTICAL QUANTUM-WELL STRUCTURES", Applied physics letters, 68(23), 1996, pp. 3221-3223

Abstract

We report on time-resolved photoluminescence study of AlxGa1-xAs spontaneous vertical quantum well (SVQW) structures on GaAs V-grooved substrates. Four distinct photoluminescence peaks are observed originatingfrom the spatial nonuniformity of the alloy compositions spontaneously formed during metalorganic vapor phase epitaxial growth. The decay time of the (111)A sidewall AlGaAs decreased with increasing temperature, while that of the SVQW increased. The rise time of the SVQW was found to be longer than the typical value of the exciton formation and increases with increasing temperature, indicating that the exciton formation is not limiting factor of the rise time. These results are explained in terms of the exciton diffusion toward the SVQW from the outer AlGaAs layers with less Ga compositions. In addition, two dimensionality of the SVQW was evidenced by temperature dependence of the radiativelifetime. (C) 1996 American Institute of Physics.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 16/07/20 alle ore 19:08:45