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Titolo:
OPTICAL-PROPERTIES OF INGAAS LINEAR GRADED BUFFER LAYERS ON GAAS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Autore:
LEE B; BAEK JH; LEE JH; CHOI SW; JUNG SD; HAN WS; LEE EH;
Indirizzi:
ELECTR & TELECOMMUN RES INST,POB 106 TAEJON 305600 SOUTH KOREA
Titolo Testata:
Applied physics letters
fascicolo: 21, volume: 68, anno: 1996,
pagine: 2973 - 2975
SICI:
0003-6951(1996)68:21<2973:OOILGB>2.0.ZU;2-U
Fonte:
ISI
Lingua:
ENG
Soggetto:
DISLOCATIONS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
8
Recensione:
Indirizzi per estratti:
Citazione:
B. Lee et al., "OPTICAL-PROPERTIES OF INGAAS LINEAR GRADED BUFFER LAYERS ON GAAS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION", Applied physics letters, 68(21), 1996, pp. 2973-2975

Abstract

We report optical characteristics of linear graded InxGa1-xAs (X(In) = 0-0.58) buffer layers grown on GaAs by low-pressure metalorganic chemical vapor deposition. Two types of wirelike surface structures were observed from the layers grown at two different temperatures. Low-temperature photoluminescence (PL) and double-crystal x-ray diffractometric measurements indicate that the PL energy and the relaxation of the graded layers were strongly dependent on the top surface structure. InGaAs cap layers were grown on top of the graded buffer layers with a variation of indium composition. A strong PL signal was observed from the top region of the graded layer grown with a lattice-matched cap layer. It suggests that the top region of the grade, similar to a graded well structure, is compressively strained but is of high structural quality without dislocations. (C) 1996 American Institute of Physics.

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Documento generato il 26/11/20 alle ore 09:01:48