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Titolo:
EPITAXIAL-GROWTH AND MAGNETIC-BEHAVIOR OF NIFE2O4 THIN-FILMS
Autore:
VENZKE S; VANDOVER RB; PHILLIPS JM; GYORY EM; SIEGRIST T; CHEN CH; WERDER D; FLEMING RM; FELDER RJ; COLEMAN E; OPILA R;
Indirizzi:
AT&T BELL LABS,600 MT AVE MURRAY HILL NJ 07974 AT&T BELL LABS MURRAY HILL NJ 07974
Titolo Testata:
Journal of materials research
fascicolo: 5, volume: 11, anno: 1996,
pagine: 1187 - 1198
SICI:
0884-2914(1996)11:5<1187:EAMONT>2.0.ZU;2-8
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
24
Recensione:
Indirizzi per estratti:
Citazione:
S. Venzke et al., "EPITAXIAL-GROWTH AND MAGNETIC-BEHAVIOR OF NIFE2O4 THIN-FILMS", Journal of materials research, 11(5), 1996, pp. 1187-1198

Abstract

Thin films of NiFe2O4 were deposited on SrTiO3 (001) and Y0.15Zr0.85O2 (yttria-stabilized zirconia) (001) and (011) substrates by 90 degrees-off-axis sputtering. Ion channeling, x-ray diffraction, and transmission electron microscopy studies reveal that films grown at 600 degrees C consist of similar to 300 Angstrom diameter grains separated by thin regions of highly defective or amorphous material. The development of this microstructure is attributed to the presence of rotated or displaced crystallographic domains and is comparable to that observed in other materials grown on mismatched substrates (e.g., GaAs/Si or Ba2YCu3O7/MgO). Postdeposition annealing at 1000 degrees C yields films that are essentially single crystal. The magnetic properties of the filmsare strongly affected by the structural changes; unannealed films arenot magnetically saturated even in an applied field of 55 kOe, while the annealed films have properties comparable to those of bulk, singlecrystal NiFe2O4. Homoepitaxial films grown at 400 degrees C also are essentially single crystal.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 20/01/21 alle ore 06:00:16