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Titolo:
RADIATION IONIZATION-ENERGY IN ALPHA-SIH
Autore:
DUBEAU J; HAMEL LA; POCHET T;
Indirizzi:
CARLETON UNIV,DEPT PHYS OTTAWA ON K1S 5B6 CANADA UNIV MONTREAL,DEPT PHYS,GRP RECH PHYS & TECHNOL COUCHES MINCES,GCM MONTREAL PQ H3C 3J7 CANADA
Titolo Testata:
Physical review. B, Condensed matter
fascicolo: 16, volume: 53, anno: 1996,
pagine: 10740 - 10750
SICI:
0163-1829(1996)53:16<10740:RIIA>2.0.ZU;2-V
Fonte:
ISI
Lingua:
ENG
Soggetto:
AMORPHOUS-SILICON; DETECTORS; RECOMBINATION; PHOTOEMISSION; CARRIERS; STATES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
44
Recensione:
Indirizzi per estratti:
Citazione:
J. Dubeau et al., "RADIATION IONIZATION-ENERGY IN ALPHA-SIH", Physical review. B, Condensed matter, 53(16), 1996, pp. 10740-10750

Abstract

The radiation ionization energy epsilon(p), which is the mean energy expended per electron-hole pair generated in a given material by an ionizing radiation, is one of the most important parameters governing the properties of radiation detectors based on this material. Since the advent of semiconductor detectors in the 1950s, a great deal of experimental and theoretical work has been done to determine values of epsilon(p) for various crystalline semiconductors. After some review of thetheoretical models proposed for crystalline semiconductors, we present a detailed study for an amorphous semiconductor. A microscopic MonteCarlo calculation, taking into account the actual density of states, was performed in a-Si:H to study the energy sharing between ionizationand phonon production during hot carrier thermalization. This simulation yields values from 4.3 to 5.0 eV for epsilon p for reasonable values of the phonon emission mean free path lambda(r) in a-Si:H. This result is in agreement with experimental results of about 4.4 eV and are comparable to 3.63 eV in crystalline silicon, despite the larger 1.7-eV gap.

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Documento generato il 27/11/20 alle ore 09:51:53