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Titolo:
MORPHOLOGICAL STABILITY OF A HETEROPHASE INTERFACE UNDER ELECTROMIGRATION CONDITIONS
Autore:
KLINGER L; LEVIN L; SROLOVITZ D;
Indirizzi:
TECHNION ISRAEL INST TECHNOL,DEPT MAT ENGN IL-32000 HAIFA ISRAEL UNIV MICHIGAN,DEPT MAT SCI & ENGN ANN ARBOR MI 48104
Titolo Testata:
Journal of applied physics
fascicolo: 9, volume: 79, anno: 1996,
pagine: 6834 - 6839
SICI:
0021-8979(1996)79:9<6834:MSOAHI>2.0.ZU;2-I
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
L. Klinger et al., "MORPHOLOGICAL STABILITY OF A HETEROPHASE INTERFACE UNDER ELECTROMIGRATION CONDITIONS", Journal of applied physics, 79(9), 1996, pp. 6834-6839

Abstract

The evolution of the interface between two mutually insoluble metallic phases, under the influence of a strong electric field is examined. A slight perturbation of the interface away from a plane y=h(x) leads to a component of the electric field along the interface. This createsa diffusion flux of the individual atoms along the interface which, in turn, leads to an increase in the amplitude of the initial perturbation and thus to an interfacial profile instability. The processes is expected to be controlled by interface diffusion in response to three distinct driving forces: the electric field, internal stresses (which arise due to the accumulation or depletion of matter at the interface),and the interfacial curvature. The stress distribution along the interface was found from a self-consistent solution of the elastic problem. For the instability to occur, differences in effective atomic charges, elastic moduli and/or atomic mobilities of the two constituent metals are required. Small sinusoidal corrugations are shown to grow with time for a range of wavelengths. The corrugations can grow monotonically or vary in oscillatory manner, depending on their wavelength. (C) 1996 American Institute of Physics.

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Documento generato il 10/07/20 alle ore 19:19:15