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Titolo:
INFLUENCE OF THE BARRIER HEIGHTS ON VERTICAL TRANSPORT IN CDTE CDMNTESUPERLATTICES/
Autore:
CHEN P; NICHOLLS JE; ONEILL M; HOGG JHC; HAGSTON WE; LUNN B; ASHENFORD DE;
Indirizzi:
UNIV HULL,DEPT APPL PHYS KINGSTON HULL HU6 7RX N HUMBERSIDE ENGLAND UNIV HULL,DEPT ENGN DESIGN & MANUFACTURE KINGSTON HULL HU6 7RX N HUMBERSIDE ENGLAND
Titolo Testata:
Journal of crystal growth
fascicolo: 1-4, volume: 159, anno: 1996,
pagine: 1066 - 1069
SICI:
0022-0248(1996)159:1-4<1066:IOTBHO>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
PERPENDICULAR TRANSPORT; OPTICAL-PROPERTIES; PHOTOLUMINESCENCE; WELLS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
14
Recensione:
Indirizzi per estratti:
Citazione:
P. Chen et al., "INFLUENCE OF THE BARRIER HEIGHTS ON VERTICAL TRANSPORT IN CDTE CDMNTESUPERLATTICES/", Journal of crystal growth, 159(1-4), 1996, pp. 1066-1069

Abstract

Vertical transport in CdTe/Cd1-xMnxTe superlattices has been studied by an all-optical method. The diffusion lengths of carriers in 40/40 Angstrom and 50/50 Angstrom superlattices at 2 K are found to be 0.21 and 0.11 mu m, respectively. At temperatures below 20 K, the transport occurs by the hopping of excitons between localized states. At higher temperatures, the excitons are activated into extended states so that the transport efficiency increases. In an external magnetic field the vertical transport increases because of a reduction in the barrier height of the heavy hole.

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Documento generato il 30/03/20 alle ore 18:20:56