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Titolo:
PHOTOMODULATED REFLECTIVITY OF ZN1-XMNXTE ZNTE MULTIPLE-QUANTUM WELLS/
Autore:
KLAR PJ; WOLVERSON D; ASHENFORD DE; LUNN B;
Indirizzi:
UNIV E ANGLIA,SCH PHYS NORWICH NR4 7TJ NORFOLK ENGLAND UNIV E ANGLIA,SCH PHYS NORWICH NR4 7TJ NORFOLK ENGLAND UNIV HULL,DEPT ENGN DESIGN & MANUFACTURE KINGSTON HULL HU6 7RX N HUMBERSIDE ENGLAND
Titolo Testata:
Journal of crystal growth
fascicolo: 1-4, volume: 159, anno: 1996,
pagine: 528 - 532
SICI:
0022-0248(1996)159:1-4<528:PROZZM>2.0.ZU;2-5
Fonte:
ISI
Lingua:
ENG
Soggetto:
PHOTOREFLECTANCE CHARACTERIZATION; SPECTROSCOPY; GAAS; SEMICONDUCTORS; DEPENDENCE; HG1-XCDXTE; LEVEL; ZNTE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
23
Recensione:
Indirizzi per estratti:
Citazione:
P.J. Klar et al., "PHOTOMODULATED REFLECTIVITY OF ZN1-XMNXTE ZNTE MULTIPLE-QUANTUM WELLS/", Journal of crystal growth, 159(1-4), 1996, pp. 528-532

Abstract

A Zn0.93Mn0.07Te/ZnTe multiple quantum well sample has been studied by modulation spectroscopy using conventional photoreflectivity with above-band-gap laser modulation (a-PR) as well as by a novel version of the technique which employs below-band-gap laser modulation (b-PR). For both techniques, temperature dependent measurements from 10 to 150 Kwere carried out and, for b-PR, modulation frequency dependent measurements over the range 40-13 kHz were also performed. Although the appearance of the b-PR spectra is different from the a-PR spectra, both techniques give the same spectroscopic information. There is evidence that b-PR is, like a-PR, a form of electroreflectance spectroscopy. However, while the a-PR modulation mechanism is mainly determined by photoexcitation across the band gap, the photoexcitation of deep levels seems to be the dominant mechanism for b-PR.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/04/20 alle ore 09:48:29