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Titolo:
IONIZED-CLUSTER-BEAM DEPOSITION AND ELECTRICAL BISTABILITY OF C-60-TETRACYANOQUINODIMETHANE THIN-FILMS
Autore:
GAO HJ; XUE ZQ; WANG KZ; WU QD; PANG S;
Indirizzi:
CHINESE ACAD SCI,BEIJING LAB VACUUM PHYS,POB 2724 BEIJING 100080 PEOPLES R CHINA CHINESE ACAD SCI,BEIJING LAB VACUUM PHYS BEIJING 100080 PEOPLES R CHINA BEIJING UNIV,DEPT RADIOELECTR BEIJING 100871 PEOPLES R CHINA
Titolo Testata:
Applied physics letters
fascicolo: 16, volume: 68, anno: 1996,
pagine: 2192 - 2194
SICI:
0003-6951(1996)68:16<2192:IDAEBO>2.0.ZU;2-G
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
23
Recensione:
Indirizzi per estratti:
Citazione:
H.J. Gao et al., "IONIZED-CLUSTER-BEAM DEPOSITION AND ELECTRICAL BISTABILITY OF C-60-TETRACYANOQUINODIMETHANE THIN-FILMS", Applied physics letters, 68(16), 1996, pp. 2192-2194

Abstract

We report an ionized-cluster-beam (ICE) deposition and the electricalbistability of C-60-tetracyanoquinodimethane (TCNQ) thin films. The films are fabricated by using an ionized-cluster-beam deposition methodin a high vacuum system. The as-deposited films were characterized bytransmission electron microscopy and optical absorption spectroscopy,which verified the formation of the charge-transfer complex system inC-60-TCNQ thin films and the microstructure of these thin films. The structure and theelectrical property of the ICE deposited Ag-TCNQ thinfilms are also presented. The possible conductive mechanism of these ICE deposited thin films is discussed in the letter. (C) 1996 AmericanInstitute of Physics.

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Documento generato il 29/11/20 alle ore 07:07:06