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Titolo:
HYDROGEN COBALT COMPLEXES IN P-TYPE SILICON
Autore:
JOST W; WEBER J; LEMKE H;
Indirizzi:
MAX PLANCK INST FESTKORPERFORSCH,POSTFACH 800665 D-70506 STUTTGART GERMANY TECH UNIV BERLIN,INST WERKSTOFFE ELEKTROTECH D-10623 BERLIN GERMANY
Titolo Testata:
Semiconductor science and technology
fascicolo: 4, volume: 11, anno: 1996,
pagine: 525 - 530
SICI:
0268-1242(1996)11:4<525:HCCIPS>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Soggetto:
DEEP; SEMICONDUCTORS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
18
Recensione:
Indirizzi per estratti:
Citazione:
W. Jost et al., "HYDROGEN COBALT COMPLEXES IN P-TYPE SILICON", Semiconductor science and technology, 11(4), 1996, pp. 525-530

Abstract

We report on three cobalt-hydrogen related deep levels H(50): E(v) + 0.09 eV, H(90): E(V) + 0.17 eV and H(150): E(V) + 0.22 eV. The levels are formed by wet chemical etching or remote hydrogen plasma treatmentand successive annealing at 400 K in cobalt-doped float-zone p-type silicon. The level H(150) is bistable and exhibits a fully reversible transition between an electrically active and an electrically neutral configuration after zero-bias or reverse-bias annealing at temperaturesbetween 310 K and 400 K. We tentatively assign H(90) and H(150) to a CoH complex and H(50) to a CoH2 complex.

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Documento generato il 07/07/20 alle ore 21:32:54