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Titolo:
HIGH-RATE BIAS SPUTTERING FILLING OF SIO2 FILM EMPLOYING BOTH CONTINUOUS-WAVE AND TIME-MODULATED INDUCTIVELY-COUPLED PLASMAS
Autore:
KOBAYASHI Y; CHINZEI Y; ASANOME H; KUROSAKI R; KIKUCHI J; SHINGUBARA S; HORIIKE Y;
Indirizzi:
TOYO UNIV,DEPT ELECT & ELECTR ENGN,2100 KUJIRAI KAWAGOE SAITAMA 350 JAPAN TOSHIBA MACHINE CORP,CENT LAB NUMAZU SHIZUOKA 410 JAPAN HIROSHIMA UNIV,DEPT ELECT ENGN HIGASHIHIROSHIMA 724 JAPAN FUJITSU CORP,PROC FABR DIV KAWASAKI KANAGAWA 211 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 2B, volume: 35, anno: 1996,
pagine: 1474 - 1477
SICI:
0021-4922(1996)35:2B<1474:HBSFOS>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Keywords:
ICP; CVD; SIO2; SIH2CL2; TIME-MODULATE; HIGH-RATE DEPOSITION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
3
Recensione:
Indirizzi per estratti:
Citazione:
Y. Kobayashi et al., "HIGH-RATE BIAS SPUTTERING FILLING OF SIO2 FILM EMPLOYING BOTH CONTINUOUS-WAVE AND TIME-MODULATED INDUCTIVELY-COUPLED PLASMAS", JPN J A P 1, 35(2B), 1996, pp. 1474-1477

Abstract

The SiO2 film deposition employing inductively coupled plasma (ICP) with SiCl2H2/O-2 occurred rapidly in the low-density plasma region due to production of precursors of SiCl2H2Ox (x = 1-4). In an ICP CVD apparatus made with optimized distances between the antenna and the stage,and between the SiCl2H2 gas ring and the stage, a SiO2 film was with high deposition rate of more than 1 mu m/min, 1.5 times the BHF etch rate of thermal oxide, and low Cl inclusion at a pressure of around 0.1Torr. To supply ions to the Si wafer located in the ion-deficient plasma region, another time-modulated ICP antenna was set near the stage. Since deposition rate decreased with increasing wafer temperature, the laser the interference measurement of a Si wafer set on an RF-biasedstage revealed the importance of the tight adhesion of the wafer to the stage. Ar+ ion bombardment during discharge on and off-time of 5 mus enabled us to fill Si trenches with SiO2 at a V-dc of 500 V.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 24/10/20 alle ore 11:51:36