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Titolo:
CLARIFICATION OF NITRIDATION EFFECT ON OXIDE FORMATION METHODS
Autore:
KUROI T; SHIRAHATA M; OKUMURA Y; SHIMIZU S; TERAMOTO A; ANMA M; INUISHI M; MIYOSHI H;
Indirizzi:
MITSUBISHI ELECTR CORP,ULSI LAB,4-1 MIZUHARA ITAMI HYOGO 664 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 2B, volume: 35, anno: 1996,
pagine: 1454 - 1459
SICI:
0021-4922(1996)35:2B<1454:CONEOO>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Keywords:
SILICON; CMOS; NITRIDED OXIDE; NITROGEN ION IMPLANTATION; HOT CARRIER; INTERFACE STATE; ELECTRON TRAP; OXIDE RELIABILITY; CVD; STACKED OXIDE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
14
Recensione:
Indirizzi per estratti:
Citazione:
T. Kuroi et al., "CLARIFICATION OF NITRIDATION EFFECT ON OXIDE FORMATION METHODS", JPN J A P 1, 35(2B), 1996, pp. 1454-1459

Abstract

The electrical characteristics of gate dielectrics have been intensively studied. We examined four types of gate dielectrics: thermal oxidefilms formed in a pyrogenic steam ambient, those in a dry oxygen ambient: chemical vapor deposition (CVD) oxide films, and the thermal/CVD stacked oxide films. The effects of nitridation on oxide properties have been also systematically investigated using the nitrogen implantation technique. It is found that hot-carrier degradation can be improvedby nitridation irrespective of the oxidation methods. This improvement is attributed to the suppression of interface state generation and the reduction in the number of electron traps in the oxide films. Our extensive investigation concludes that the nitridation of gate oxide films by nitrogen implantation is very promising for the improvement in reliability in spite of the difference in oxide formation methods.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 02/12/20 alle ore 17:38:04