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Titolo:
RELIABILITY OF SOURCE-TO-DRAIN NONUNIFORMLY DOPED CHANNEL (NUDC) MOSFETS FOR SUB-QUARTER-MICRON REGION
Autore:
SHIRAHATA M; OKUMURA Y; ABE Y; KUROI T; INUISHI M; MIYOSHI H;
Indirizzi:
MITSUBISHI ELECTR CORP,ULSI LAB,4-1 MIZUHARA ITAMI HYOGO 664 JAPAN MITSUBISHI ELECTR CORP,ADV TECHNOL R&D CTR ITAMI HYOGO 664 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 2B, volume: 35, anno: 1996,
pagine: 874 - 881
SICI:
0021-4922(1996)35:2B<874:ROSNDC>2.0.ZU;2-V
Fonte:
ISI
Lingua:
ENG
Keywords:
HIGH PERFORMANCE MOSFETS; LOW VOLTAGE DEVICES; CHANNEL ENGINEERING; RELIABILITY; SIMULATION ANALYSIS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
10
Recensione:
Indirizzi per estratti:
Citazione:
M. Shirahata et al., "RELIABILITY OF SOURCE-TO-DRAIN NONUNIFORMLY DOPED CHANNEL (NUDC) MOSFETS FOR SUB-QUARTER-MICRON REGION", JPN J A P 1, 35(2B), 1996, pp. 874-881

Abstract

We present an analysis of hot carrier degradation in source-to-drain nonuniformely doped channel (NUDC) metal oxide semiconductor field effect transistors (MOSFETs). Simulation has been performed in order to investigate the influence of the NUDC structure on the device characteristics. It is demonstrated that the hot carrier resistance of NUDC MOSFETs is almost the same as that of conventional MOSFETs when thin gateoxide is used. This is due to the drain electric Geld strength of NUDC MOSFETs, which becomes the same as that of conventional MOSFETs whenthe gate oxide is thin, since the drain electric field is not only affected by the channel impurity profile but also strongly influenced bythe gate electrode.

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Documento generato il 02/12/20 alle ore 16:56:02