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Titolo:
ATOMIC-LAYER GROWTH OF TIO2-II THIN-FILMS
Autore:
AARIK J; AIDLA A; UUSTARE T;
Indirizzi:
TARTU STATE UNIV,INST EXPT PHYS & TECHNOL,ULIKOOLI 18 TARTU 2400 ESTONIA
Titolo Testata:
Philosophical magazine letters
fascicolo: 3, volume: 73, anno: 1996,
pagine: 115 - 119
SICI:
0950-0839(1996)73:3<115:AGOTT>2.0.ZU;2-U
Fonte:
ISI
Lingua:
ENG
Soggetto:
SURFACES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
17
Recensione:
Indirizzi per estratti:
Citazione:
J. Aarik et al., "ATOMIC-LAYER GROWTH OF TIO2-II THIN-FILMS", Philosophical magazine letters, 73(3), 1996, pp. 115-119

Abstract

Thin films of the high-pressure polymorph of titania, TIO2-II, were grown by atomic-layer deposition (ALD) using TiCI4 and H2O as precursors. Pure TiO2-II was synthesized at substrate temperatures ranging from375 to 550 degrees C while the films grown at 350 and 600 degrees C contained mixed anatase-TiO2-II and rutile-TiO2-II phases respectively. Transformation of ALD-grown TIO2-II into rutile occurred on post-growth annealing at temperatures as high as 700 degrees C.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/12/20 alle ore 19:52:17