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Titolo:
CRITICAL TEST OF THE STRUCTURE OF THE ORDERED PHASE IN EPITAXIALLY GROWN SIXGE1-X FILMS
Autore:
LEGOUES FK; TROMP RM; KESAN VP; TSANG J;
Indirizzi:
IBM CORP,THOMAS J WATSON RES CTR,DIV RES YORKTOWN HTS NY 10598
Titolo Testata:
Physical review. B, Condensed matter
fascicolo: 15, volume: 47, anno: 1993,
pagine: 10012 - 10015
SICI:
0163-1829(1993)47:15<10012:CTOTSO>2.0.ZU;2-5
Fonte:
ISI
Lingua:
ENG
Soggetto:
SCANNING TUNNELING MICROSCOPY; SILICON; SI(001);
Tipo documento:
Note
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
9
Recensione:
Indirizzi per estratti:
Citazione:
F.K. Legoues et al., "CRITICAL TEST OF THE STRUCTURE OF THE ORDERED PHASE IN EPITAXIALLY GROWN SIXGE1-X FILMS", Physical review. B, Condensed matter, 47(15), 1993, pp. 10012-10015

Abstract

Two different structural models have been recently proposed to explain the ordering observed in SixGe1-x alloys grown at low temperatures on Si(001). We show that, through dark field imaging of the different domains of the ordered phase, it is possible to differentiate between the two structures unequivocally. In this way, we determine that the ordered phase corresponds to ordering along a single set of {111} planes, where Ge-rich double layers alternate with Si-rich double layers. Wealso show that this conclusion is consistent with all other experimental data reported so far.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 21/09/20 alle ore 02:12:06