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Titolo:
PHONON STRAIN-SHIFT COEFFICIENTS OF SI1-XGEX GROWN ON GE(001)
Autore:
STOEHR M; AUBEL D; JUILLAGUET S; BISCHOFF JL; KUBLER L; BOLMONT D; HAMDANI F; FRAISSE B; FOURCADE R;
Indirizzi:
UNIV HAUTE ALSACE,FAC SCI & TECH,URA 1435,LAB PHYS & SPECT ELECTR,4 RUE FRERES LUMIERE F-68093 MULHOUSE FRANCE MAX PLANCK INST FESTKORPERFORSCH D-70569 STUTTGART GERMANY UNIV MONTPELLIER 2,LAB AGR MOLEC & MAT INORGAN F-34095 MONTPELLIER 5 FRANCE
Titolo Testata:
Physical review. B, Condensed matter
fascicolo: 11, volume: 53, anno: 1996,
pagine: 6923 - 6926
SICI:
0163-1829(1996)53:11<6923:PSCOSG>2.0.ZU;2-7
Fonte:
ISI
Lingua:
ENG
Soggetto:
GE-SI ALLOYS; RAMAN-SCATTERING; SILICON; SPECTROSCOPY; FREQUENCIES; DEPENDENCE; EPILAYERS; PRESSURE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
19
Recensione:
Indirizzi per estratti:
Citazione:
M. Stoehr et al., "PHONON STRAIN-SHIFT COEFFICIENTS OF SI1-XGEX GROWN ON GE(001)", Physical review. B, Condensed matter, 53(11), 1996, pp. 6923-6926

Abstract

High germanium content Si1-xGex alloys have been grown pseudomorphically at 400 degrees C on Ge (001) by molecular-beam epitaxy. The germanium fraction determined using x-ray diffraction measurements (x=0.8) is in good agreement with the value obtained with in situ x-ray photoemission results and vapor flux control. Combining Raman spectroscopy results and the epilayer stress value obtained by x-ray diffraction, we have determined the strain-shift coefficient (b) for each main Raman line (Ge-Ge, Si-Ge, and Si-Si). The variation of b is similar to the Gruneisen parameter (gamma) alloy variation, i.e., b and gamma values increase with increasing chemical disorder. The use of Raman scattering as a direct tool to determine the strain is discussed. The temperaturedependence of the phonon frequencies has also been studied in the range from 300-5 K.

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Documento generato il 20/09/20 alle ore 04:45:05