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Titolo:
HIGH-POWER GAINP-ALGAINP QUANTUM-WELL LASERS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY
Autore:
TAPPURA K; AARIK J; PESSA M;
Indirizzi:
NOKIA RES CTR,POB 100 SF-33721 TAMPERE FINLAND TAMPERE UNIV TECHNOL,DEPT PHYS SF-33101 TAMPERE FINLAND
Titolo Testata:
IEEE photonics technology letters
fascicolo: 3, volume: 8, anno: 1996,
pagine: 319 - 321
SICI:
1041-1135(1996)8:3<319:HGQLGB>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
DOUBLE-HETEROSTRUCTURE; 100 GAAS; DIODES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
18
Recensione:
Indirizzi per estratti:
Citazione:
K. Tappura et al., "HIGH-POWER GAINP-ALGAINP QUANTUM-WELL LASERS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY", IEEE photonics technology letters, 8(3), 1996, pp. 319-321

Abstract

AlGaInP-based quantum-well laser diodes operating at wavelengths near680 nm have been grown by all solid source molecular beam epitaxy (SSMBE). The lowest room temperature threshold current densities obtainedfrom shallow ridge structures were 300 A/cm(2) and 330 A/cm(2) for pulsed and continuous wave operation, respectively, The dependences of the differential quantum efficiency and threshold current density on the cavity length were also studied in this preliminary SSMBE work, The internal quantum efficiency of 87-89% and the internal losses of 7-10 cm(-1) were obtained.

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Documento generato il 01/12/20 alle ore 16:00:31