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Titolo:
LP-MOCVD GROWN (INAS)(M)(GAAS)(M) SHORT-PERIOD SUPERLATTICES ON INP
Autore:
OH DK; SUH KS; CHOO H; KIM HM; PYUN KE; PARK HM; NAHM S;
Indirizzi:
ELECTR & TELECOMMUN RES INST,SEMICOND TECHNOL DIV,POB 106 TAEJON 305600 SOUTH KOREA KEIMYUNG UNIV,DEPT MAT ENGN,DALSEO GU TAEGU SOUTH KOREA
Titolo Testata:
Journal of electronic materials
fascicolo: 3, volume: 25, anno: 1996,
pagine: 485 - 489
SICI:
0361-5235(1996)25:3<485:LG(SSO>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Soggetto:
EPITAXY;
Keywords:
INAS/GAAS; LOW PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION (LP-MOCVD); SHORT PERIOD SUPERLATTICES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
9
Recensione:
Indirizzi per estratti:
Citazione:
D.K. Oh et al., "LP-MOCVD GROWN (INAS)(M)(GAAS)(M) SHORT-PERIOD SUPERLATTICES ON INP", Journal of electronic materials, 25(3), 1996, pp. 485-489

Abstract

(InAs)(m)(GaAs)(m) (1 less than or equal to m less than or equal to 12) short period superlattices (SPSs) have been grown on semi-insulatedInP substrates with a 200 nm InP cap layer using low pressure metalorganic chemical vapor deposition (MOCVD). According to double crystal x-ray diffraction and transmission electron microscopy results, the critical layer thickness of(InAs),(GaAs), SPS was observed to be similar to 30 Angstrom (m = 5). For the SPS below the critical layer thickness, mirror-like surface morphology was found without defects, and strongintensity Fourier transformed photoluminescence (FT-PL) spectra were also obtained at room temperature. The SPS with m = 4 showed a drasticimprovement in photoluminescence intensity of order of two compared to an InGaAs ternary layer. However, the SPS with a large value of m (mgreater than or equal to 6), rough surface was observed with defects,with broad and weak FT-PL spectra. The surface morphology of SPS was greatly affected by the substrate orientation. The SPS with m = 5 was grown on two degree tilted substrate from (100) direction and showed poor surface morphology as compared to the one grown on (100) exact substrate Moreover, the SPS grown on a (111)B substrate showed a rough triangular pattern with Nomarski optical microscopy. In-situ thermal annealed SPS with m = 4 showed a 18 meV increase in PL peak energy compared to the as-grown sample due to phase separation resulting from thermal interdiffusion.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 02/10/20 alle ore 01:48:54