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Titolo:
OPTICAL-PROPERTIES OF GE1-YCY ALLOYS
Autore:
ORNER BA; KHAN A; HITS D; CHEN F; ROE K; PICKETT J; SHAO X; WILSON RG; BERGER PR; KOLODZEY J;
Indirizzi:
UNIV DELAWARE,DEPT ELECT ENGN,140 EVANS HALL NEWARK DE 19716
Titolo Testata:
Journal of electronic materials
fascicolo: 2, volume: 25, anno: 1996,
pagine: 297 - 300
SICI:
0361-5235(1996)25:2<297:OOGA>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
EPITAXY;
Keywords:
CARBON; GE1-YCY; GERMANIUM; GROUP IV ALLOYS; MOLECULAR BEAM EPITAXY (MBE); OPTICAL ABSORPTION; PHOTOLUMINESCENCE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
B.A. Orner et al., "OPTICAL-PROPERTIES OF GE1-YCY ALLOYS", Journal of electronic materials, 25(2), 1996, pp. 297-300

Abstract

The Ge1-yCy semiconductor alloy system offers promise as a material for use in heterostructure devices based on Si as well as other materials. We have grown Ge1-yCy alloys by solid source molecular beam epitaxy on Si substrates. Layer thicknesses ranged from 0.01 to 3 mu m, and Auger electron spectroscopy and secondary ion mass spectrometry indicated C fractions up to 3 at. %. Optical absorption in the near-infraredregion indicated a shift in the energy bandgap from that of Ge which was attributed to the effects of alloying. The dependence of the bandgap on composition was consistent with linear interpolations of the Ge and C conduction band minimums. We observed a fundamental absorption edge characteristic of an indirect bandgap material. Photoluminescence spectra at 11K of thick, relaxed layers indicated single broad peaks near the expected bandgap energy.

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Documento generato il 29/09/20 alle ore 04:27:53