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Titolo:
LOW-THRESHOLD PBEUSETE PBTE SEPARATE-CONFINEMENT BURIED HETEROSTRUCTURE DIODE-LASERS/
Autore:
FEIT Z; MCDONALD M; WOODS RJ; ARCHAMBAULT V; MAK P;
Indirizzi:
LASER PHOTON INC,ANALYT DIV ANDOVER MA 01810
Titolo Testata:
Applied physics letters
fascicolo: 6, volume: 68, anno: 1996,
pagine: 738 - 740
SICI:
0003-6951(1996)68:6<738:LPPSBH>2.0.ZU;2-5
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; OPERATION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
10
Recensione:
Indirizzi per estratti:
Citazione:
Z. Feit et al., "LOW-THRESHOLD PBEUSETE PBTE SEPARATE-CONFINEMENT BURIED HETEROSTRUCTURE DIODE-LASERS/", Applied physics letters, 68(6), 1996, pp. 738-740

Abstract

Continuous wave (cw) operating temperature of 223 K was achieved withmolecular beam epitaxy grown separate confinement buried heterostructure (SCBH) PbTe diode lasers with PbEuSeTe electrical and optical confinement layers. This is the highest cw operating temperature reported for midinfrared diode lasers. The active region of the SCBH diode lasers varies laterally to form a crescent-shaped waveguide with a maximumthickness of 0.15 mu m and a lateral width of 2 mu m. Exceptionally low threshold currents of 102 mA at 200 K, 166 mA at 210 K, and 249 mA at 215 It were measured. (C) 1996 American Institute of Pysics.

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Documento generato il 04/12/20 alle ore 21:53:24