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Titolo:
EPITAXIAL-GROWTH OF LINBO3 THIN-FILMS ON (001)SAPPHIRE BY PULSED-LASER DEPOSITION
Autore:
AUBERT P; GARRY G; BISARO R; OLIVIER J; LOPEZ JG; URLACHER C;
Indirizzi:
THOMSON CSF,CENT RECH LAB,DOMAINE CORBEVILLE F-91404 ORSAY FRANCE
Titolo Testata:
Microelectronic engineering
fascicolo: 1-4, volume: 29, anno: 1995,
pagine: 107 - 110
SICI:
0167-9317(1995)29:1-4<107:EOLTO(>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
10
Recensione:
Indirizzi per estratti:
Citazione:
P. Aubert et al., "EPITAXIAL-GROWTH OF LINBO3 THIN-FILMS ON (001)SAPPHIRE BY PULSED-LASER DEPOSITION", Microelectronic engineering, 29(1-4), 1995, pp. 107-110

Abstract

LiNbO3 thin films have been deposited on c-cut single crystalline sapphire substrates (alpha-Al2O3) by the pulsed laser deposition technique. Crystalline quality and structural properties have been determined using Rutherford backscattering spectroscopy (RES) and x-ray diffraction experiments. Under optimised conditions, the (001) epitaxial growthhas been obtained with some grain misorientations in the plane and anaverage surface roughness of about 2 nm as measured by atomic force microscopy (AFM).

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 25/09/20 alle ore 11:44:33