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Titolo:
HYDROGEN-INDUCED DEFECTS IN COBALT-DOPED N-TYPE SILICON
Autore:
JOST W; WEBER J; LEMKE H;
Indirizzi:
MAX PLANCK INST FESTKORPERFORSCH,POSTFACH 800665 D-70506 STUTTGART GERMANY TECH UNIV BERLIN,INST WERKSTOFFE ELEKTROTECH D-10623 BERLIN GERMANY
Titolo Testata:
Semiconductor science and technology
fascicolo: 1, volume: 11, anno: 1996,
pagine: 22 - 26
SICI:
0268-1242(1996)11:1<22:HDICNS>2.0.ZU;2-0
Fonte:
ISI
Lingua:
ENG
Soggetto:
CRYSTALLINE SILICON; DEEP; LEVEL;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
21
Recensione:
Indirizzi per estratti:
Citazione:
W. Jost et al., "HYDROGEN-INDUCED DEFECTS IN COBALT-DOPED N-TYPE SILICON", Semiconductor science and technology, 11(1), 1996, pp. 22-26

Abstract

Five new cobalt-hydrogen-related deep levels in cobalt-doped float-zone n-type silicon are identified. The levels are formed after wet chemical etching, polishing or remote plasma hydrogenation. We correlate the levels with the injection of hydrogen into cobalt-doped silicon by deep-level transient spectroscopy (DLTS) depth profiling and capacitance-voltage analysis. Cleaving the sample, without any wet chemical treatment, gives only one DLTS level, the well known Co acceptor at E(c) - 0.38 eV. The hydrogen-cobalt complexes show different thermal stabilities. One is stable up to 470 K, but all other defects anneal out at 400 K and lead to an increase of the cobalt acceptor concentration.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 16/07/20 alle ore 06:26:18