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Titolo:
SYNCHROTRON-RADIATION IRRADIATION EFFECTS FOR SIHN ON SI(100) SURFACEIN THE SYNCHROTRON-RADIATION STIMULATED SI GAS-SOURCE MOLECULAR-BEAM EPITAXY
Autore:
YOSHIGOE A; NAGASONO M; MASE K; URISU T;
Indirizzi:
GRAD UNIV ADV STUDIES,INST MOLEC SCI,38 MYODAIJI OKAZAKI AICHI 444 JAPAN GRAD UNIV ADV STUDIES,INST MOLEC SCI OKAZAKI AICHI 444 JAPAN INST MOLEC SCI,DEPT VACUUM UV PHOTOSCI OKAZAKI AICHI 444 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 12B, volume: 34, anno: 1995,
pagine: 6894 - 6898
SICI:
0021-4922(1995)34:12B<6894:SIEFSO>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
REFLECTION ABSORPTION-SPECTROSCOPY; CHEMICAL-VAPOR-DEPOSITION; EXTERNAL REFLECTION; DISILANE; SILICON; TEMPERATURE; DESORPTION; SYSTEM;
Keywords:
SYNCHROTRON RADIATION; GAS SOURCE MBE; PHOTOCHEMICAL REACTION; INFRARED REFLECTION ABSORPTION SPECTROSCOPY; BML-IRAS; SURFACE SIHN;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
25
Recensione:
Indirizzi per estratti:
Citazione:
A. Yoshigoe et al., "SYNCHROTRON-RADIATION IRRADIATION EFFECTS FOR SIHN ON SI(100) SURFACEIN THE SYNCHROTRON-RADIATION STIMULATED SI GAS-SOURCE MOLECULAR-BEAM EPITAXY", JPN J A P 1, 34(12B), 1995, pp. 6894-6898

Abstract

SiHn on Si(100) surfaces during synchrotron radiation (SR) stimulatedgas source molecular beam epitaxy (SR-GSMBE) using Si2H6 gas (1.0x10(-3)Torr) are investigated in situ by means of infrared reflection absorption spectroscopy using CoSi2 buried metal layer substrates (BML-IRAS) in the low substrate temperature region (400 degrees C-140 degrees C). It has been found that SiH2 and SiH3 on the surface are easily decomposed by SR to SiH and tile decomposition rate of SiH is extremely slow. The decomposition reaction cross sections for SiH2 and SiH3 for the total irradiating photon flux have been evaluated to be 5.7x10-(20)cm(2) and 1.7x10(-19) cm(2), respectively. Experimental results are discussed, considering the model of the localized multihole excitation and its quenching.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 18/09/20 alle ore 11:00:09