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Titolo:
A PARTICULAR EPITAXIAL SI1-YCY ALLOY GROWTH MODE ON SI(001) EVIDENCEDBY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY
Autore:
CLAVERIE A; FAURE J; BALLADORE JL; SIMON L; MESLI A; DIANI M; KUBLER L; AUBEL D;
Indirizzi:
UNIV HAUTE ALSACE,FAC SCI,LAB PHYS & SPECTROSCOPIE ELECTR,URA,CNRS 1435,4 RUE FRERES LUMIERE F-68093 MULHOUSE FRANCE UNIV HAUTE ALSACE,FAC SCI,LAB PHYS & SPECTROSCOPIE ELECTR,URA,CNRS 1435 F-68093 MULHOUSE FRANCE CEMES,LOE,CNRS F-31055 TOULOUSE FRANCE UNIV REIMS,ELECTRON MICROSCOPY LAB,GRP RECH SURFACES & MAT F-51100 REIMS FRANCE CTR RECH NUCL,LAB PHYS & APPLICAT SEMICOND,UPR,CNRS 292 F-67037 STRASBOURG FRANCE
Titolo Testata:
Journal of crystal growth
fascicolo: 1-4, volume: 157, anno: 1995,
pagine: 420 - 425
SICI:
0022-0248(1995)157:1-4<420:APESAG>2.0.ZU;2-1
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
8
Recensione:
Indirizzi per estratti:
Citazione:
A. Claverie et al., "A PARTICULAR EPITAXIAL SI1-YCY ALLOY GROWTH MODE ON SI(001) EVIDENCEDBY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY", Journal of crystal growth, 157(1-4), 1995, pp. 420-425

Abstract

Si1-yCy alloys have been grown on Si(001) by Si molecular beam epitaxy (MBE) under a low pressure of C2H4 at 600 degrees C. In spite of relatively high carbon concentrations, estimated by X-ray photoelectron spectroscopy and secondary ion mass spectrometry (SIMS), a good epitaxial relationship with the substrate is obtained as proved by cross-sectional transmission electron diffraction observations (XTED), reconstructed 2x1 low-energy electron diffraction (LEED) diagrams and Si2p X-ray photoelectron diffraction (XPD) modulated polar patterns for the alloys with the cubic symmetry of the Si substrate. Nevertheless the simultaneous absences of relevant Cls XPD features, significant strain induced X-ray diffraction (XRD) shifts and clear C-related local infrared(IR) or Raman modes, give rise to the question of the incorporation mode of C, different here from the often invoked substitutional mode inother Si1-yCy alloys. Inspection by cross-sectional transmission electron microscopy (XTEM) of these samples with the lowest C-content shows regularly spaced contrast variations (striations), roughly parallel to the Si/alloy interface with a periodicity of about 9 nm. High resolution micrographs reveal between the contrasted strips a nearly perfect and unstrained Si lattice, free of dislocations or SiC nanocrystal inclusions. With increasing C-concentrations, extended defects such as twins or stacking faults appear in the layer, generating roughness at the surface and the striations finally disappear. The striations may tentatively be accounted for pseudomorphic growth of new C-rich phases,theoretically suggested by Rucker et al. [H. Rucker, M. Methfessel, E. Bugiel and H.J. Osten, Phys. Rev. Lett. 72 (1994) 3578], matching the C-induced strain and allowing subsequent strain free Si-growth.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 24/09/20 alle ore 21:11:20