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Titolo:
OPTICAL AND ELECTRONIC-PROPERTIES OF SIGEC ALLOYS GROWN ON SI SUBSTRATE
Autore:
KOLODZEY J; BERGER PR; ORNER BA; HITS D; CHEN F; KHAN A; SHAO X; WAITE MM; SHAH SI; SWANN CP; UNRUH KM;
Indirizzi:
UNIV DELAWARE,DEPT ELECT ENGN,140 EVANS HALL NEWARK DE 19716 DUPONT CO INC,EXPTL STN WILMINGTON DE 19898 UNIV DELAWARE,DEPT PHYS & ASTRON NEWARK DE 19716
Titolo Testata:
Journal of crystal growth
fascicolo: 1-4, volume: 157, anno: 1995,
pagine: 386 - 391
SICI:
0022-0248(1995)157:1-4<386:OAEOSA>2.0.ZU;2-L
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; PHOTOLUMINESCENCE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
19
Recensione:
Indirizzi per estratti:
Citazione:
J. Kolodzey et al., "OPTICAL AND ELECTRONIC-PROPERTIES OF SIGEC ALLOYS GROWN ON SI SUBSTRATE", Journal of crystal growth, 157(1-4), 1995, pp. 386-391

Abstract

Metastable Si1-x-yGexCy alloys were grown by molecular beam epitaxy on (100) Si substrates. Solid elemental sources were used for the Si and Ge beams, and a resistively heated graphite filament was used for the C beam. Up to 3 at % of C was incorporated in the alloy layers. Optical transmission measurements showed that the absorption edge of thicklayers increased to higher energies with increasing C fraction, and revealed the presence of Si-C and Ge-C vibrational modes in the infrared. Al low temperatures, the alloys showed significant photoluminescence. The bandgap energies of thick layers increased linearly with the C fraction and followed a linear dependence of the bandgap on composition. Measurements of the valence band density of states using X-ray photoelectron spectroscopy indicated that the valence band energy maximum increased with the C fraction relative to that of SiGe alloys of similar composition. Our results indicated that SiGeC alloys are promising materials for Si-based heterostructure devices.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 13/08/20 alle ore 14:24:03