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Titolo:
FORMATION OF AMORPHOUS AND CRYSTALLINE PHASES, AND PHASE-TRANSITION BY SOLID-STATE REACTION IN ZR SI MULTILAYER THIN-FILMS/
Autore:
SHIM JY; KWAK JS; CHI EJ; BAIK HK; LEE SM;
Indirizzi:
YONSEI UNIV,DEPT ENGN MET,SEODAEMUN KU,134 SHINCHON DONG SEOUL 120749SOUTH KOREA KANGWEON NATL UNIV,DEPT MAT ENGN CHUNCHON SOUTH KOREA
Titolo Testata:
Thin solid films
fascicolo: 1-2, volume: 269, anno: 1995,
pagine: 102 - 107
SICI:
0040-6090(1995)269:1-2<102:FOAACP>2.0.ZU;2-9
Fonte:
ISI
Lingua:
ENG
Soggetto:
BINARY DIFFUSION COUPLES; GROWTH-KINETICS; SILICON; NUCLEATION; ZR; INTERLAYERS; SYSTEMS; NICKEL; ALLOY; HEAT;
Keywords:
AMORPHIZATION; CRYSTALLIZATION; PHASE TRANSITIONS; SILICIDES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
22
Recensione:
Indirizzi per estratti:
Citazione:
J.Y. Shim et al., "FORMATION OF AMORPHOUS AND CRYSTALLINE PHASES, AND PHASE-TRANSITION BY SOLID-STATE REACTION IN ZR SI MULTILAYER THIN-FILMS/", Thin solid films, 269(1-2), 1995, pp. 102-107

Abstract

Amorphous phase and crystalline phase formation, and phase transitionby solid-state reaction were observed in Zr/Si multilayer thin films by differential scanning calorimetry and X-ray diffraction. The resultwas compared with those expected by the effective driving force and effective heat of formation models. An amorphous reaction occurred in Zr/Si multilayer thin films and it was consistent with that predicted by the effective driving force model. The first crystalline phase formed by solid-state reaction was found to be ZrSi in the Zr/Si system. According to the effective heat of formation model, however, ZrSi, was expected to be formed first. The difference in first crystalline phase between the experimental result and the predicted one is discussed. ZrSi2 was formed after the formation of ZrSi, regardless of the atomic concentration ratios of Zr/Si multilayer thin films. The rate-controlling step for the formation of ZrSi was a nucleation of ZrSi and the activation energies for the formation of ZrSi and ZrSi2 were 1.64 +/- 0.19 eV and 2.28 +/- 0.36 eV, respectively.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 14/07/20 alle ore 06:30:42