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Titolo:
GRANULAR SUPERCONDUCTING CONTACTS TO GAAS-ALGAAS SEMICONDUCTOR HETEROSTRUCTURES
Autore:
MARSH AM; WILLIAMS DA; AHMED H;
Indirizzi:
UNIV CAMBRIDGE,CAVENDISH LAB,MICROELECTR RES CTR,MADINGLEY RD CAMBRIDGE CB3 0HE ENGLAND UNIV CAMBRIDGE,CAVENDISH LAB,HITACHI CAMBRIDGE LAB CAMBRIDGE CB3 0HE ENGLAND
Titolo Testata:
Semiconductor science and technology
fascicolo: 12, volume: 10, anno: 1995,
pagine: 1694 - 1699
SICI:
0268-1242(1995)10:12<1694:GSCTGS>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
ANDREEV REFLECTION; MICROJUNCTIONS; CONSTRICTIONS; CONDUCTANCE; RESISTANCE; JUNCTIONS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
29
Recensione:
Indirizzi per estratti:
Citazione:
A.M. Marsh et al., "GRANULAR SUPERCONDUCTING CONTACTS TO GAAS-ALGAAS SEMICONDUCTOR HETEROSTRUCTURES", Semiconductor science and technology, 10(12), 1995, pp. 1694-1699

Abstract

The differential resistance characteristics of junctions formed from annealed granular superconducting contacts and GaAs:AlGaAs heterostructures are reported. At low bias voltage there is a smooth resistance dip due to Andreev reflection at the interfaces and diffusive electron transport in the semiconductor. At higher bias there is a peak in the resistance corresponding to the onset of phonon-mediated processes, and further structure with an unusual temperature dependence. The width of the Andreev dip and its apparent insensitivity to temperature are due to a combination of the temperature dependence of the superconductor gap, the thermal carrier distribution in the normal regions, and thegeometry of the contacts. Disorder near the interfaces is believed tobe responsible for the high degree of Andreev reflection, and this increased probability persists in an applied magnetic field, as has beenpredicted.

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Documento generato il 25/09/20 alle ore 14:36:27