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Titolo:
PHOTOMODULATED REFLECTIVITY OF ZN1-XMNXTE ZNTE MULTIPLE-QUANTUM WELLSWITH BELOW-BANDGAP EXCITATION/
Autore:
KLAR PJ; TOWNSLEY CM; WOLVERSON D; DAVIES JJ; ASHENFORD DE; LUNN B;
Indirizzi:
UNIV E ANGLIA,SCH PHYS NORWICH NR4 7TJ NORFOLK ENGLAND UNIV HULL,DEPT ENGN DESIGN & MANUFACTURE KINGSTON HULL HU6 7RX N HUMBERSIDE ENGLAND
Titolo Testata:
Semiconductor science and technology
fascicolo: 12, volume: 10, anno: 1995,
pagine: 1568 - 1577
SICI:
0268-1242(1995)10:12<1568:PROZZM>2.0.ZU;2-K
Fonte:
ISI
Lingua:
ENG
Soggetto:
PHOTOREFLECTANCE; ZNTE; EXCITONS; SEMICONDUCTORS; SPECTROSCOPY; ELECTROREFLECTANCE; MAGNETOREFLECTANCE; MAGNETIZATION; TRANSITIONS; PARAMETERS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
54
Recensione:
Indirizzi per estratti:
Citazione:
P.J. Klar et al., "PHOTOMODULATED REFLECTIVITY OF ZN1-XMNXTE ZNTE MULTIPLE-QUANTUM WELLSWITH BELOW-BANDGAP EXCITATION/", Semiconductor science and technology, 10(12), 1995, pp. 1568-1577

Abstract

A series of Zn0.93Mn0.07Te/ZnTe multiple-quantum well (MQW) structures of different quantum well widths has been studied at 77 K using the conventional modulation technique of photoreflectivity (PR) with above-bandgap light providing the modulation as well as a novel version of the technique which employs below-bandgap excitation. Photoluminescence (PL) spectra of the structures are also presented. The appearance ofthe PR spectra obtained with below-bandgap excitation differs from that of the PR spectra with above-bandgap excitation, but fitting the spectra with appropriate lineshapes gives the same spectroscopic information about the energy positions of the excitonic transitions in the well and the bandgaps of the ZnTe buffer layer and the Zn0.93Mn0.07Te barriers. The fits to the PR spectra yield energy positions of the lowest excitonic transitions which are consistent with the PL data. From the transition energies calculated with a one-dimensional transfer matrix model in which strain effects are taken into account, we conclude that the structures are to a good approximation strained to the ZnTe buffer layers.

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Documento generato il 02/04/20 alle ore 00:27:29