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Titolo:
DIELECTRIC-RELAXATION OF (BA,SR)TIO3 THIN-FILMS
Autore:
HORIKAWA T; MAKITA T; KUROIWA T; MIKAMI N;
Indirizzi:
MITSUBISHI ELECTR CORP,SEMICOND RES LAB,1-1 TSUKAGUCHI HONMACHI 8 CHOME AMAGASAKI HYOGO 661 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 9B, volume: 34, anno: 1995,
pagine: 5478 - 5482
SICI:
0021-4922(1995)34:9B<5478:DO(T>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Keywords:
(BA, SR)TIO3; DIELECTRIC RELAXATION; DIELECTRIC DISPERSION; FERROELECTRIC; SPUTTERING; THIN FILM;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
12
Recensione:
Indirizzi per estratti:
Citazione:
T. Horikawa et al., "DIELECTRIC-RELAXATION OF (BA,SR)TIO3 THIN-FILMS", JPN J A P 1, 34(9B), 1995, pp. 5478-5482

Abstract

The dielectric relaxation of (Ba0.5Sr0.5)TiO3 thin films with high electric resistivity is investigated. The films are deposited by an rf-magnetron sputtering method in an atmosphere of argon and oxygen. The dielectric dispersion of the films is measured in the frequency range of 10(-2)-10(6) Hz. It is found that the dielectric constant epsilon slightly decreases with frequency, following the relationship of d epsilon/d(log(10)f)similar to-0.01 epsilon, and the dielecltric loss is almost constant at less than 1% in the measured frequency range. This type of dielectric relaxation causes absorption current which is inversely proportional to time, as the result of the dielectric aftereffect. In a dynamic random access memory (DRAM) operation, the dielectric relaxation would result in less than 10% loss of storage charge during therefresh cycle, and the film's DC leakage less affects the device operation.

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Documento generato il 24/09/20 alle ore 21:30:40