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Titolo:
IN-SITU STUDY OF ATOMIC LAYER EPITAXY GROWTH OF TANTALUM OXIDE THIN-FILMS FROM TA(OC2H5)(5) AND H2O
Autore:
KUKLI K; AARIK J; AIDLA A; SIIMON H; RITALA M; LESKELA M;
Indirizzi:
TARTU STATE UNIV,INST EXPT PHYS & TECHNOL EE-2400 TARTU ESTONIA UNIV HELSINKI,DEPT CHEM FIN-00014 HELSINKI FINLAND
Titolo Testata:
Applied surface science
, volume: 112, anno: 1997,
pagine: 236 - 242
SICI:
0169-4332(1997)112:<236:ISOALE>2.0.ZU;2-U
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; PRECURSORS; TECHNOLOGY; PENTOXIDE; REACTOR; FLOW;
Keywords:
ATOMIC LAYER EPITAXY; TANTALUM OXIDE; TANTALUM ETHOXIDE; QUARTZ CRYSTAL MICROBALANCE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
27
Recensione:
Indirizzi per estratti:
Citazione:
K. Kukli et al., "IN-SITU STUDY OF ATOMIC LAYER EPITAXY GROWTH OF TANTALUM OXIDE THIN-FILMS FROM TA(OC2H5)(5) AND H2O", Applied surface science, 112, 1997, pp. 236-242

Abstract

Ta2O5 thin films have been deposited in atomic layer epitaxy process from Ta(OC2H5)(5) and H2O. A quartz crystalline mass-sensor was exploited to detect the adsorption processes at the gas-solid interface during the film growth. It is suggested that Ta(OC2H5)(5) reacts with surface hydroxyls producing intermediate surface species (-O)(n)Ta(OC2H5)(5-n) where n varies with the reactor temperature. During the subsequent water pulse these species react further converting the surface back to the hydroxyl-terminated one. The uncontrolled deposition due to thetemperature-induced decomposition of tantalum ethoxide with the activation energy of 100 +/- 6 kJ/mol contributes to the film growth above 275 degrees C. The value of the diffusion coefficient D = 0.0075 m(2)/s for gas-phase Ta(OC2H5)(5) has been calculated at 250 degrees C. Estimated sticking coefficient of Ta(OC2H5)(5) is about one order of magnitude higher than that of H2O and nearly one order of magnitude lower than that of TaCl5.

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Documento generato il 28/11/20 alle ore 12:39:01