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Titolo:
EFFECT OF ION-BOMBARDMENT IN VERY-HIGH FREQUENCY GLOW-DISCHARGE ON GROWTH AND PROPERTIES OF SIHX FILMS
Autore:
KOSAREV AI; SMIMOV AS; ABRAMOV AS; VINOGRADOV AJ; USTAVSCHIKOV AY; SHUTOV MV;
Indirizzi:
AF IOFFE PHYS TECH INST,POLITEKHNICHESKAYA 26 ST PETERSBURG 194021 RUSSIA ST PETERSBURG STATE TECH INST ST PETERSBURG 195251 RUSSIA
Titolo Testata:
Journal of vacuum science & technology. A. Vacuum, surfaces, and films
fascicolo: 2, volume: 15, anno: 1997,
pagine: 298 - 306
SICI:
0734-2101(1997)15:2<298:EOIIVF>2.0.ZU;2-F
Fonte:
ISI
Lingua:
ENG
Soggetto:
HYDROGENATED AMORPHOUS-SILICON; EXCITATION-FREQUENCY; PLASMA; DEPOSITION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
A.I. Kosarev et al., "EFFECT OF ION-BOMBARDMENT IN VERY-HIGH FREQUENCY GLOW-DISCHARGE ON GROWTH AND PROPERTIES OF SIHX FILMS", Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(2), 1997, pp. 298-306

Abstract

Ion and electron flow characteristics have been studied in different regimes both in rf (13.56 MHz) and VHF (58 MHz) glow discharges in silane. The measurements were conducted in a growth reactor and the data obtained was used for SiHx films deposition. Electronic properties of the films prepared under a variety of ion bombardment in rf, VHF discharges have been investigated. Correlation of these properties with ionparameters in rf, VHF discharges is discussed. (C) 1997 American Vacuum Society.

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Documento generato il 14/08/20 alle ore 08:16:34