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Titolo:
A C 1S CORE-LEVEL X-RAY PHOTOELECTRON DIFFRACTION CHARACTERIZATION OFSUBSTITUTIONAL CARBON IN EPITAXIAL SI1-YCY ALLOYS GROWN ON SI(111) AND SI(001)
Autore:
SIMON L; AUBEL D; KUBLER L; BISCHOFF JL; GEWINNER G; BALLADORE JL;
Indirizzi:
UNIV HAUTE ALSACE,FAC SCI,LAB PHYS & SPECT ELECT,CNRS,URA 1435,4 RUE FRERES LUMIERE F-68093 MULHOUSE FRANCE UNIV HAUTE ALSACE,FAC SCI,LAB PHYS & SPECT ELECT,CNRS,URA 1435 F-68093 MULHOUSE FRANCE CNRS,UPR 292,LAB PHYS & APPLICAT SEMICOND F-67037 STRASBOURG 2 FRANCE
Titolo Testata:
Journal of applied physics
fascicolo: 6, volume: 81, anno: 1997,
pagine: 2635 - 2642
SICI:
0021-8979(1997)81:6<2635:AC1CXP>2.0.ZU;2-S
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; SPECTROSCOPY; ELECTRON; SILICON; SENSITIVITY; SI;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
25
Recensione:
Indirizzi per estratti:
Citazione:
L. Simon et al., "A C 1S CORE-LEVEL X-RAY PHOTOELECTRON DIFFRACTION CHARACTERIZATION OFSUBSTITUTIONAL CARBON IN EPITAXIAL SI1-YCY ALLOYS GROWN ON SI(111) AND SI(001)", Journal of applied physics, 81(6), 1997, pp. 2635-2642

Abstract

Epitaxial strained growth of Si1-yCy alloys with rather high C concentrations (y similar to 1.5%) has been performed on Si(111) and Si(001)using molecular beam epitaxy (MBE) Si evaporation and thermal interaction of the growth surface with a low C2H4 pressure at 500 degrees C. Carbon contents, determined by secondary ion mass spectrometry, infrared (ir) spectrometry, in situ C 1s and Si 2p x-ray photoelectron spectroscopy measurements and x-ray diffraction (XRD), are being compared. Monocrystalline quality of the epilayers is checked by low energy electron diffraction and x-ray photoelectron diffraction (XPD). As indirectly ascertained by the ir local vibration mode (LVM) and a shifted partially strain induced epilayer diffraction line in the theta-2 theta XRD analysis, carbon is accommodated in substitutional sites (C-sub) whose local atomic order,is investigated for the first time by XPD, C 1spolar angle distributions being measured in different azimuthal directions. As the data reveal, for a C emitter, next nearest neighbor bondorientations identical to those for Si atoms in a Si matrix, XPD readily provides direct evidence in favor of C-sub positions. UP to now our limited angular resolution does not allow observation of possible bond orientation changes due to local strain-induced lattice distortionsaround C atoms. Nevertheless, by increasing growth temperature (600-650 degrees C) and promoting formation of more C-rich phases (SinC or SiC), the effects of substitution of second or higher nearest Si neighbors by C atoms can be clearly evidenced. By the way, a significant C 1s binding energy difference between C-sub and C in C-rich phases is observed and may be used as a signature of the C dilution in the grown epilayer: a characteristic value of 283.8 eV is obtained for the C-sub Site giving rise to the LVM. (C) 1997 American Institute of Physics.

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Documento generato il 27/10/20 alle ore 10:47:46