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Titolo:
NEW INTERPRETATION OF THE DOMINANT RECOMBINATION CENTER IN PLATINUM DOPED SILICON
Autore:
SACHSE JU; SVEINBJORNSSON EO; JOST W; WEBER J; LEMKE H;
Indirizzi:
MAX PLANCK INST FESTKORPERFORSCH,POSTFACH 80 06 65 D-70506 STUTTGART GERMANY TU BERLIN,INST WERKSTOFFE ELEKTROTECH D-10623 BERLIN GERMANY
Titolo Testata:
Applied physics letters
fascicolo: 12, volume: 70, anno: 1997,
pagine: 1584 - 1586
SICI:
0003-6951(1997)70:12<1584:NIOTDR>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
LEVEL TRANSIENT SPECTROSCOPY; HYDROGEN COMPLEXES; DEEP LEVELS; LIFETIME; SI; DEFECT; GOLD;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
26
Recensione:
Indirizzi per estratti:
Citazione:
J.U. Sachse et al., "NEW INTERPRETATION OF THE DOMINANT RECOMBINATION CENTER IN PLATINUM DOPED SILICON", Applied physics letters, 70(12), 1997, pp. 1584-1586

Abstract

The midgap level in platinum doped ii-type silicon, which was proposed to be the dominant recombination center, is identified as a platinum-hydrogen complex. Hydrogenation elf the samples is achieved by wet-chemical etching at room temperature. Defect profiles. determined by deep level transient spectroscopy, clearly associate the level with the concentration profile of atomic hydrogen. (C) 1997 American Institute of Physics.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 02/07/20 alle ore 22:35:40