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Titolo:
NONEXISTENCE OF THE DIATOMIC BETA-TIN STRUCTURE
Autore:
NELMES RJ; MCMAHON MI; BELMONTE SA;
Indirizzi:
UNIV EDINBURGH,DEPT PHYS & ASTRON EDINBURGH EH9 3JZ MIDLOTHIAN SCOTLAND
Titolo Testata:
Physical review letters
fascicolo: 19, volume: 79, anno: 1997,
pagine: 3668 - 3671
SICI:
0031-9007(1997)79:19<3668:NOTDBS>2.0.ZU;2-F
Fonte:
ISI
Lingua:
ENG
Soggetto:
HIGH-PRESSURE PHASE; GROUP-IV SEMICONDUCTORS; III-V; CRYSTAL-STRUCTURE; TRANSITIONS; GPA; GAAS; DIFFRACTION; EQUATION; STATE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
28
Recensione:
Indirizzi per estratti:
Citazione:
R.J. Nelmes et al., "NONEXISTENCE OF THE DIATOMIC BETA-TIN STRUCTURE", Physical review letters, 79(19), 1997, pp. 3668-3671

Abstract

Many high-pressure phases of the III-V and II-VI semiconductors have been believed to have the diatomic equivalent of the (tetragonal) beta-tin structure. Recent work has shown this to be incorrect in several cases. It is now shown that the same is true of all the remaining possibilities-AlSb, HgSe, InP, and GaP. The phases concerned all have orthorhombic structures of the Cmcm type. The apparent nonexistence of thebeta-tin structure has important implications for the structural systematics. [S0031-9007(97)04474-8].

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 26/09/20 alle ore 08:57:21