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Titolo:
THIN MULTILAYER CDS ZNS FILMS GROWN BY SILAR TECHNIQUE/
Autore:
VALKONEN MP; LINDROOS S; KANNIAINEN T; LESKELA M; TAPPER U; KAUPPINEN E;
Indirizzi:
UNIV HELSINKI,DEPT CHEM,POB 55 FIN-00014 HELSINKI FINLAND VTT CHEM TECHNOL,AEROSOL TECHNOL GRP FIN-02044 ESPOO FINLAND
Titolo Testata:
Applied surface science
fascicolo: 1-2, volume: 120, anno: 1997,
pagine: 58 - 64
SICI:
0169-4332(1997)120:1-2<58:TMCZFG>2.0.ZU;2-0
Fonte:
ISI
Lingua:
ENG
Soggetto:
IONIC LAYER ADSORPTION; OPTICAL-PROPERTIES; QUANTUM-WELLS; ZNS; PHOTOLUMINESCENCE; SUPERLATTICES; DEPOSITION; EPITAXY; CDS;
Keywords:
THIN FILM; MULTILAYER; CDS; ZNS; SILAR-METHOD;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
26
Recensione:
Indirizzi per estratti:
Citazione:
M.P. Valkonen et al., "THIN MULTILAYER CDS ZNS FILMS GROWN BY SILAR TECHNIQUE/", Applied surface science, 120(1-2), 1997, pp. 58-64

Abstract

Multilayer ZnS/CdS thin films were grown an glass, ITO-covered glass and (100)GaAs substrates by successive ionic layer adsorption and reaction (SILAR) technique at room temperature anti ambient pressure. The layers in multilayer thin film structures were nominally 1-6 nm thick and the amount of layers varied so that the total thickness of 100-120nm was achieved. The films were polycrystalline according to X-ray diffraction analysis and scanning electron microscopy, The interfaces between the separate cadmium sulfide (CdS) and zinc sulfide (ZnS) layerswere not sharp, but contained thin CdxZn1-xS solid solution layers. Annealing enhanced the mixing of the different layers and after 50 h at300 degrees C no separate CdS and ZnS X-ray reflections could be detected. About 20 nm thick layers could be detected as separate fields byscanning electron microscopy. (C) 1997 Elsevier Science B.V.

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Documento generato il 05/07/20 alle ore 03:38:49