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Titolo:
AFM STUDIES ON ZNS THIN-FILMS GROWN BY ATOMIC LAYER EPITAXY
Autore:
IHANUS J; RITALA M; LESKELA M; PROHASKA T; RESCH R; FRIEDBACHER G; GRASSERBAUER M;
Indirizzi:
UNIV HELSINKI,DEPT CHEM,POB 55 FIN-00014 HELSINKI FINLAND VIENNA UNIV TECHNOL,INST ANALYT CHEM A-1060 VIENNA AUSTRIA
Titolo Testata:
Applied surface science
fascicolo: 1-2, volume: 120, anno: 1997,
pagine: 43 - 50
SICI:
0169-4332(1997)120:1-2<43:ASOZTG>2.0.ZU;2-K
Fonte:
ISI
Lingua:
ENG
Soggetto:
OXIDE; DEPOSITION; MORPHOLOGY; MICROSCOPY; PRECURSOR;
Keywords:
AFM; ALE; ZNS; THIN FILM; MICA; GLASS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
26
Recensione:
Indirizzi per estratti:
Citazione:
J. Ihanus et al., "AFM STUDIES ON ZNS THIN-FILMS GROWN BY ATOMIC LAYER EPITAXY", Applied surface science, 120(1-2), 1997, pp. 43-50

Abstract

Polycrystalline ZnS films were grown from ZnCl2 and H2S on glass and mica using the atomic layer epitaxy (ALE) technique. Morphological andcrystalline changes during the ALE growth of Zns were studied by AFM and XRD. AFM measurements revealed that substantial agglomeration tookplace in the beginning of the growth. On glass the nucleation densityof ZnS was higher than on mica and consequently the films on glass remained smoother than those on mica. XRD measurements revealed that orientation of the films was stronger on mica than on glass. (C) 1997 Elsevier Science B.V.

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Documento generato il 23/09/20 alle ore 16:01:54