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Titolo:
BIEXCITONIC BINDING-ENERGIES IN THE TRANSITION REGIME FROM 3-DIMENSIONAL TO 2-DIMENSIONAL SEMICONDUCTORS
Autore:
EUTENEUER A; MOBIUS J; RETTIG R; MAYER EJ; HOFMANN M; STOLZ W; GOBEL EO; RUHLE WW;
Indirizzi:
UNIV MARBURG,FACHBEREICH PHYS D-35032 MARBURG GERMANY UNIV MARBURG,WISSENSCH ZENTRUM MAT WISSENSCH D-35032 MARBURG GERMANY
Titolo Testata:
Physical review. B, Condensed matter
fascicolo: 16, volume: 56, anno: 1997,
pagine: 10028 - 10031
SICI:
0163-1829(1997)56:16<10028:BBITTR>2.0.ZU;2-7
Fonte:
ISI
Lingua:
ENG
Soggetto:
GAAS QUANTUM-WELLS; BOUND EXCITONS; BEATS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
26
Recensione:
Indirizzi per estratti:
Citazione:
A. Euteneuer et al., "BIEXCITONIC BINDING-ENERGIES IN THE TRANSITION REGIME FROM 3-DIMENSIONAL TO 2-DIMENSIONAL SEMICONDUCTORS", Physical review. B, Condensed matter, 56(16), 1997, pp. 10028-10031

Abstract

We study the dependence of the binding energies of excitonic molecules on the confinement in semiconductor quantum wells. A set of symmetrically strained (GaIn)As/Ga(PAs) quantum wells with different well depths and equal well widths is investigated with transient degenerate four-wave mixing. The ratio of biexcitonic to excitonic binding energy increases with stronger confinement. This experimental result is discussed in detail in the framework of recent theoretical predictions and experimental results. [S0163-1829(97)51440-8].

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Documento generato il 04/12/20 alle ore 19:52:26